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Si7222DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
R thJA
R thJC
38
5.5
50
7
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 94 °C/W.
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
40
40
- 3.8
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
0.6
1.6
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 12 V
V DS = 40 V, V GS = 0 V
V DS = 40 V, V GS = 0 V, T J = 55 °C
V DS ≥ 5 V, V GS = 10 V
20
± 100
1
10
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 5.7 A
V GS = 4.5 V, I D = 4.3 A
V DS = 15 V, I D = 5.7 A
0.035
0.039
18
0.042
0.047
Ω
S
Dynamic b
Input Capacitance
C iss
700
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 20 V, V GS = 0 V, f = 1 MHz
76
45
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 20 V, V GS = 10 V, I D = 5.2 A
V DS = 20 V, V GS = 4.5 V, I D = 5.2 A
19
8
1.5
29
12
nC
Gate-Drain Charge
Q gd
2.4
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
R g
t d(on)
t r
t d(off)
f = 1 MHz
V DD = 20 V, R L = 4 Ω
I D ? 5 A, V GEN = 4.5 V, R g = 1 Ω
1.9
9
50
20
15
80
30
Ω
Fall Time
Turn-On Delay Time
t f
t d(on)
7
5
12
9
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 20 V, R L = 4 Ω
I D ? 5 A, V GEN = 10 V, R g = 1 Ω
12
21
6
90
35
10
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Document Number: 73439
S-83052-Rev. B, 29-Dec-08
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